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Application of metallic materials for selective growth
Němeček, Tomáš ; Rezek, Bohuslav (referee) ; Čechal, Jan (advisor)
The Si(100) surface and Ga surface phases up to 1 ML on their oxidation have been studied by XPS and LEED. The selective growth of Ga on the SiO2/Si structures fabricated by EBL has been analyzed using SEM and AFM methods. It was proved that Ga clusters grow in structures beside the oxide. The structure of alumina on Ni3Al(111) and NiAl(110) substrates was fully determined by combining the results of STM measurements and DFT simulations. It was determined the alumina/NiAl(110) does not form a suitable template for ordered Fe and Co clusters growth. However, the next research confirmed the alumina/Ni3Al(111) forms template appropriate to clusters growth purpose.
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STM study of metal adatom mobility on Si(100) surface
Rozbořil, Filip ; Ošťádal, Ivan (advisor) ; Mysliveček, Josef (referee)
Surface diffusion of group III and IV metals on Si(100) is studied. Three methods for obtaining diffusion barriers are presented and discrepancies in published results are discussed. Room temperature growth of Al on Si(100) is studied using STM, observing a monomodal scaled island size distribution function. A Kinetic Monte Carlo simulation model is employed to obtain bonding energies and diffusion barriers for Al/Si(100). The best agreement between the measured and simulated characteristics is found for strongly anisotropic diffusion with barriers 0.60 eV in the direction orthogonal to the Si dimer rows and 0.80 eV in the parallel direction. Modifications of the cooling system required for observing metal adatom diffusion on Si(100) using STM are described and the first low-temperature experiment is carried out.
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Adsorption and mobility of Al adatoms on Si(100) surface
Majer, Karel ; Ošťádal, Ivan (advisor) ; Mysliveček, Josef (referee)
The subject of the thesis is growth of aluminium structures one-dimensional chains on Si(100) surface. Growth characteristics of Al on Si(100) at room temperature and at higher temperature and various coverages were measured using STM. The results are discussed with respect to previous experiments and a way to find the value of activation energy of surface migration is proposed. An important part of the thesis is preparation and tests of a new low-temperature UHV apparatus for STM experiments. Functions of the apparatus are described. A way to prepare clean Si(100) surface as well as the methods of achieving atomic-scale resolution in STM were found in conditions previously unknown. A test of evaporators for Al and Sn is described. Al deposition has not been successful in the new apparatus yet. Sn deposition has been successful and low-temperature structures of tin on Si(100) were observed. They differ from room-temperature structures and contain kinks which were previously observed only in Al structures.
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Interaction of group III and IV metals with Si(100) surface in temperature range from 20 to 800K
Setvín, Martin ; Ošťádal, Ivan (advisor) ; Janda, Pavel (referee) ; Klapetek, Petr (referee)
1 Title: Interaction of group III and IV metals with Si(100) surface in temperature range from 20 to 800 K Author: Martin Setvín Department: Departement of Surface and Plasma Science Supervisor of the doctoral thesis: Doc. RNDr. Ivan Ošt'ádal CSc. Abstract: Interaction of group III and IV metals with Si(100) surface was studied by STM (Scanning Tunneling Microscopy) and AFM (Atomic Force Microscopy) in temperature range from 20 to 800 K. Adsorption and hopping of single metal adatoms on Si(100)-c(4×2) reconstruction can be observed by STM at low temperatures. Activation energies and frequency prefactors for hopping of single indium atoms were measured by two meth- ods - direct STM measurement at low temperature and Kinetic Monte Carlo simulations of layer growth at room temperature. Group III and IV atoms self-assemble into single atom wide chains on Si(100) surface at about room temperature. Atomic and electronic structure of the chains was investi- gated by means of STM and dynamic non-contact AFM. Keywords: Si(100), STM, AFM, adsorption, diffusion
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Interaction of organic molecules with metal passivated semiconductor surfaces studied via STM
Zimmermann, Petr ; Sobotík, Pavel (advisor)
Title Interaction of Organic Molecules with Metal Passivated Silicon Surfaces Studied via STM Author Petr Zimmermann Department Department of Plasma and Surface Science Supervisor Doc. RNDr. Pavel Sobotík, CSc. Department of Plasma and Surface Science Abstract Organic molecules offer a wide range of optical, electronic or chemical properties. Coupling them to silicon could pave way to novel applications and devices, however, a controlled molecular functionalization of silicon remains challenging due to the presence of highly reactive dangling bonds on its surfaces. We attempt to decrease the reactivity of low index silicon surfaces with an ultra-thin layer of a metal adsorbates and study their interaction with organic molecules via scanning tunnelling microscopy. In the first part we investigate the interaction of ethylene, a small unsaturated molecule, with tin and indium 1D chains grown on Si(001) - 2 × 1. The chains consist of dimers structurally analogous to the dimers of the underlying Si(001) - 2 × 1 surface. Aided by photoelectron spectroscopy we find that the Sn chains are less reactive than the Si(001) surface and that the absence of a π dimer bond renders indium chains inert. In the second part we study the interaction of copper phthalocyanine, a small macrocyclic heteroaromatic compound, with the...
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Interaction of organic molecules with metal passivated semiconductor surfaces studied via STM
Zimmermann, Petr ; Sobotík, Pavel (advisor)
Title Interaction of Organic Molecules with Metal Passivated Silicon Surfaces Studied via STM Author Petr Zimmermann Department Department of Plasma and Surface Science Supervisor Doc. RNDr. Pavel Sobotík, CSc. Department of Plasma and Surface Science Abstract Organic molecules offer a wide range of optical, electronic or chemical properties. Coupling them to silicon could pave way to novel applications and devices, however, a controlled molecular functionalization of silicon remains challenging due to the presence of highly reactive dangling bonds on its surfaces. We attempt to decrease the reactivity of low index silicon surfaces with an ultra-thin layer of a metal adsorbates and study their interaction with organic molecules via scanning tunnelling microscopy. In the first part we investigate the interaction of ethylene, a small unsaturated molecule, with tin and indium 1D chains grown on Si(001) - 2 × 1. The chains consist of dimers structurally analogous to the dimers of the underlying Si(001) - 2 × 1 surface. Aided by photoelectron spectroscopy we find that the Sn chains are less reactive than the Si(001) surface and that the absence of a π dimer bond renders indium chains inert. In the second part we study the interaction of copper phthalocyanine, a small macrocyclic heteroaromatic compound, with the...
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Interaction of organic molecules with metal passivated semiconductor surfaces studied via STM
Zimmermann, Petr ; Sobotík, Pavel (advisor) ; Plšek, Jan (referee) ; Šikola, Tomáš (referee)
Title Interaction of Organic Molecules with Metal Passivated Silicon Surfaces Studied via STM Author Petr Zimmermann Department Department of Plasma and Surface Science Supervisor Doc. RNDr. Pavel Sobotík, CSc. Department of Plasma and Surface Science Abstract Organic molecules offer a wide range of optical, electronic or chemical properties. Coupling them to silicon could pave way to novel applications and devices, however, a controlled molecular functionalization of silicon remains challenging due to the presence of highly reactive dangling bonds on its surfaces. We attempt to decrease the reactivity of low index silicon surfaces with an ultra-thin layer of a metal adsorbates and study their interaction with organic molecules via scanning tunnelling microscopy. In the first part we investigate the interaction of ethylene, a small unsaturated molecule, with tin and indium 1D chains grown on Si(001) - 2 × 1. The chains consist of dimers structurally analogous to the dimers of the underlying Si(001) - 2 × 1 surface. Aided by photoelectron spectroscopy we find that the Sn chains are less reactive than the Si(001) surface and that the absence of a π dimer bond renders indium chains inert. In the second part we study the interaction of copper phthalocyanine, a small macrocyclic heteroaromatic compound, with the...
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Influence of decreasing surface temperature of Si(100) on metal growth morphology at low coverage
Doležal, Jiří ; Ošťádal, Ivan (advisor) ; Matvija, Peter (referee)
The thesis is focused on study of growth of tin chains on Si(100) surface deposited by vacuum evaporation at temperatures below room temperature. Scanning tunneling microscopy (STM) was used for surface imaging and growth characteristics were determined from the data. Comparison of the characteristics for different deposition temperatures and two different coverages shows a dominant role of the same growth mechanism in all cases. An influence of heating toward room temperature on chain length distribution of structures prepared at low temperatures is described and discussed. A role of Cdefects at the chain growth and a corresponding influence on shape of a scaling function of the chain length distribution is discussed as well. Properties of the STM system with liquid nitrogen cooling were successfully tested together with developed pumping of nitrogen into a container inside the STM vacuum chamber.
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Adsorption and mobility of Al adatoms on Si(100) surface
Majer, Karel ; Ošťádal, Ivan (advisor) ; Mysliveček, Josef (referee)
The subject of the thesis is growth of aluminium structures one-dimensional chains on Si(100) surface. Growth characteristics of Al on Si(100) at room temperature and at higher temperature and various coverages were measured using STM. The results are discussed with respect to previous experiments and a way to find the value of activation energy of surface migration is proposed. An important part of the thesis is preparation and tests of a new low-temperature UHV apparatus for STM experiments. Functions of the apparatus are described. A way to prepare clean Si(100) surface as well as the methods of achieving atomic-scale resolution in STM were found in conditions previously unknown. A test of evaporators for Al and Sn is described. Al deposition has not been successful in the new apparatus yet. Sn deposition has been successful and low-temperature structures of tin on Si(100) were observed. They differ from room-temperature structures and contain kinks which were previously observed only in Al structures.
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Interaction of group III and IV metals with Si(100) surface in temperature range from 20 to 800K
Setvín, Martin ; Ošťádal, Ivan (advisor) ; Janda, Pavel (referee) ; Klapetek, Petr (referee)
1 Title: Interaction of group III and IV metals with Si(100) surface in temperature range from 20 to 800 K Author: Martin Setvín Department: Departement of Surface and Plasma Science Supervisor of the doctoral thesis: Doc. RNDr. Ivan Ošt'ádal CSc. Abstract: Interaction of group III and IV metals with Si(100) surface was studied by STM (Scanning Tunneling Microscopy) and AFM (Atomic Force Microscopy) in temperature range from 20 to 800 K. Adsorption and hopping of single metal adatoms on Si(100)-c(4×2) reconstruction can be observed by STM at low temperatures. Activation energies and frequency prefactors for hopping of single indium atoms were measured by two meth- ods - direct STM measurement at low temperature and Kinetic Monte Carlo simulations of layer growth at room temperature. Group III and IV atoms self-assemble into single atom wide chains on Si(100) surface at about room temperature. Atomic and electronic structure of the chains was investi- gated by means of STM and dynamic non-contact AFM. Keywords: Si(100), STM, AFM, adsorption, diffusion
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